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Modules are instead designed to run at different clock frequencies: for example, a PC-1600 module is designed to run at 100 MHz, and a PC-2100 is designed to run at 133 MHz. A module's clock speed designates the data rate at which it is guaranteed to perform, hence it is guaranteed to run at lower ( underclocking ) and can possibly run at ...
Video random-access memory (VRAM) is dedicated computer memory used to store the pixels and other graphics data as a framebuffer to be rendered on a computer monitor. [1] It often uses a different technology than other computer memory, in order to be read quickly for display on a screen.
Many device interfaces or protocols (e.g., SATA, USB, SAS, PCIe) are used both inside many-device boxes, such as a PC, and one-device-boxes, such as a hard drive enclosure. Accordingly, this page lists both the internal ribbon and external communications cable standards together in one sortable table.
PC-800 RDRAM operated at 400 MHz and delivered 1600 MB/s of bandwidth over a 16-bit bus. It was packaged as a 184-pin RIMM (Rambus in-line memory module) form factor, similar to a DIMM (dual in-line memory module). Data is transferred on both the rising and falling edges of the clock signal, a technique known as DDR. To emphasize the advantages ...
The highest-rated DDR2 modules in 2009 operate at 533 MHz (1066 MT/s), compared to the highest-rated DDR modules operating at 200 MHz (400 MT/s). At the same time, the CAS latency of 11.2 ns = 6 / (bus clock rate) for the best PC2-8500 modules is comparable to that of 10 ns = 4 / (bus clock rate) for the best PC-3200 modules.
A notable exception was the IBM PC. Graphics display was facilitated by the use of an expansion card with its own memory plugged into an ISA slot. The first IBM PC to use the SMA was the IBM PCjr, released in 1984. Video memory was shared with the first 128 KiB of RAM. The exact size of the video memory could be reconfigured by software to meet ...
Compared to DDR2 memory, DDR3 memory uses less power. Some manufacturers further propose using "dual-gate" transistors to reduce leakage of current. [10]According to JEDEC, [11]: 111 1.575 volts should be considered the absolute maximum when memory stability is the foremost consideration, such as in servers or other mission-critical devices.
The minimum number of clock cycles required between issuing the precharge command and opening the next row. The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS: The minimum number of clock cycles required between a row active command and issuing the precharge command.