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SCR 4-layer (p-n-p-n) diagram. A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device.The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor.
Mercury-arc rectifiers have been replaced by silicon semiconductor rectifiers and high-power thyristor circuits in the mid-1970s. The most powerful mercury-arc rectifiers ever built were installed in the Manitoba Hydro Nelson River Bipole HVDC project, with a combined rating of more than 1 GW and 450 kV.
The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.)
More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in the form n–p–n or p–n–p. Combinations of such semiconductor devices on a single chip allow for the creation of integrated circuits.
Common circuit diagram symbols (US ANSI symbols) An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may ...
Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric. [1] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications. The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device.