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Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
It must also be constructed from static RAM, which is far more expensive than the dynamic RAM used for larger memories. Static RAM also consumes far more power. CPU speed improvements slowed significantly partly due to major physical barriers and partly because current CPU designs have already hit the memory wall in some sense.
M. MAI Systems Corp. v. Peak Computer, Inc. MCDRAM; Mellon optical memory; Memory address; Memory architecture; Memory bandwidth; Memory bank; Memory barrier
Quad Data Rate (QDR) SRAM is a type of static RAM computer memory that can transfer up to four words of data in each clock cycle. Like Double Data-Rate (DDR) SDRAM, QDR SRAM transfers data on both rising and falling edges of the clock signal. The main purpose of this capability is to enable reads and writes to occur at high clock frequencies ...
Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM. The SRAM memory cell is a type of flip-flop circuit, typically implemented using MOSFETs. These require very low power to maintain the stored value when not being accessed.
Static random-access memory, a type of semiconductor memory that uses bistable latching circuitry to store each bit Shadow Random Access Memory , for faster ROM chip access Short-range attack missile
Historical lowest retail price of computer memory and storage Electromechanical memory used in the IBM 602, an early punch multiplying calculator Detail of the back of a section of ENIAC, showing vacuum tubes Williams tube used as memory in the IAS computer c. 1951 8 GB microSDHC card on top of 8 bytes of magnetic-core memory (1 core is 1 bit.)
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...