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When no current is observed through the tube, the negative voltage has reached the value that is high enough to slow down and stop the most energetic photoelectrons of kinetic energy K max. This value of the retarding voltage is called the stopping potential or cut off potential V o . [ 11 ]
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage.
The highest (maximum) value of the photo-current is called saturation current. The value of retarding potential at which photo-current becomes zero is called cut-off voltage or stopping potential for the given frequency of the incident ray.
The bias voltage is chosen to be a few times the electron temperature so that the negative electrode draws the ion saturation current, which, like the floating potential, is directly measured. A common rule of thumb for this voltage bias is 3/e times the expected electron temperature.
The effect of reverse saturation current on the I-V curve of a crystalline silicon solar cell are shown in the figure to the right. Physically, reverse saturation current is a measure of the "leakage" of carriers across the p–n junction in reverse bias.
In nuclear and materials physics, stopping power is the retarding force acting on charged particles, typically alpha and beta particles, due to interaction with matter, resulting in loss of particle kinetic energy. [1] [2] Stopping power is also interpreted as the rate at which a material absorbs the kinetic energy of a charged particle.
where is the breakdown voltage in volts, is the pressure in pascals, is the gap distance in meters, is the secondary-electron-emission coefficient (the number of secondary electrons produced per incident positive ion), is the saturation ionization in the gas at a particular / (electric field/pressure), and is related to the excitation and ...
As an application example, the steady-state space-charge-limited current across a piece of intrinsic silicon with a charge-carrier mobility of 1500 cm 2 /V-s, a relative dielectric constant of 11.9, an area of 10 −8 cm 2 and a thickness of 10 −4 cm can be calculated by an online calculator to be 126.4 μA at 3 V. Note that in order for this ...