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Exposure latitude is the extent to which a light-sensitive material can be exposed (overexposed or underexposed) and still achieve an acceptable result. [1] It is relevant to both digital and analogue processes such as photolithography and photography .
Beyond the models used for RET and OPC, computational lithography attempts to improve chip manufacturability and yields such as by using the signature of the scanner to help improve accuracy of the OPC model: [8] polarization characteristics of the lens pupil, Jones matrix of the stepper lens, optical parameters of the photoresist stack ...
Immersion lithography is a technique used in semiconductor manufacturing to enhance the resolution and accuracy of the lithographic process. It involves using a liquid medium, typically water, between the lens and the wafer during exposure.
Photolithography (also known as optical lithography) is a process used in the manufacturing of integrated circuits. It involves using light to transfer a pattern onto a substrate, typically a silicon wafer. The process begins with a photosensitive material, called a photoresist, being applied to the substrate.
As a result, it is a slow process, requiring much longer exposure times than conventional electron beam lithography. Also high energy beams always bring up the concern of substrate damage. Interference lithography using electron beams is another possible path for patterning arrays with nanometer-scale periods.
This gives rise to the interesting observation that, for example, a standard definition television picture derived from a film scanner that uses oversampling, as described later, may appear sharper than a high definition picture shot on a camera with a poor modulation transfer function. The two pictures show an interesting difference that is ...
Proton beam writing (or p-beam writing) is a direct-write lithography process that uses a focused beam of high-energy protons to pattern resist material at nanodimensions. [1] The process, although similar in many ways to direct writing using electrons , nevertheless offers some interesting and unique advantages.
where n is an integer, λ is the wavelength of the light the zone plate is meant to focus and f is the distance from the center of the zone plate to the focus. When the zone plate is small compared to the focal length, this can be approximated as r n ≃ n λ f {\displaystyle r_{n}\simeq {\sqrt {n\lambda f}}}