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  2. Resistive random-access memory - Wikipedia

    en.wikipedia.org/wiki/Resistive_random-access_memory

    Compared to PRAM, ReRAM operates at a faster timescale (switching time can be less than 10 ns), while compared to MRAM, it has a simpler, smaller cell structure (less than 8F² MIM stack). A vertical 1D1R (one diode, one resistive switching device) integration can be used for crossbar memory structure to reduce the unit cell size to 4F² (F is ...

  3. Magnetoresistive RAM - Wikipedia

    en.wikipedia.org/wiki/Magnetoresistive_RAM

    2003 — A 128 kbit MRAM chip was introduced, manufactured with a 180 nm lithographic process; 2004 June — Infineon unveiled a 16-Mbit prototype, manufactured with a 180 nm lithographic process; September — MRAM becomes a standard product offering at Freescale. October — Taiwan developers of MRAM tape out 1 Mbit parts at TSMC.

  4. Memristor - Wikipedia

    en.wikipedia.org/wiki/Memristor

    A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.

  5. Programmable metallization cell - Wikipedia

    en.wikipedia.org/wiki/Programmable_metallization...

    CBRAM vs. metal-oxide ReRAM [ edit ] CBRAM differs from metal-oxide ReRAM in that for CBRAM metal ions dissolve readily in the material between the two electrodes, while for metal-oxides, the material between the electrodes requires a high electric field causing local damage akin to dielectric breakdown , producing a trail of conducting defects ...

  6. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    Data reliability is guaranteed in F-RAM even in a high magnetic field environment compared to MRAM. Cypress Semiconductor's [ 16 ] F-RAM devices are immune to the strong magnetic fields and do not show any failures under the maximum available magnetic field strengths (3,700 Gauss for horizontal insertion and 2,000 Gauss for vertical insertion).

  7. Furniture screw - Wikipedia

    en.wikipedia.org/wiki/Furniture_screw

    A Chinese study published in 2019 which compared different types of screws used in medium density fiberboards (MDF) for furniture purposes found that the most important factor for how well a screw worked was the depth of the screw, and secondly the diameter of the hole. The screw type itself, however, had the least effect on the strength of the ...

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