Search results
Results from the WOW.Com Content Network
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
Flash memory is a solid-state chip that maintains stored data without any external power source. It is a close relative to the EEPROM; it differs in that erase operations must be done on a block basis, and its capacity is substantially larger than that of an EEPROM. Flash memory devices use two different technologies—NOR and NAND—to map data.
For this reason, later BIOS implementations may use a small portion of BIOS flash ROM as NVRAM, to store setup data. [7] Today's UEFI motherboards use NVRAM to store configuration data (NVRAM is a portion of the UEFI flash ROM), but by many OEMs' design, the UEFI settings are still lost if the CMOS battery fails. [8] [9]
nvSRAM is a type of non-volatile random-access memory (NVRAM). [1] [2] nvSRAM extends the functionality of basic SRAM by adding non-volatile storage such as an EEPROM to the SRAM chip. In operation, data is written to and read from the SRAM portion with high-speed access; the data in SRAM can then be stored into or retrieved from the non ...
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating-gate MOSFETs. They differ at the circuit level depending on ...
NVDIMM-N: DIMM with flash storage and traditional DRAM on the same module. The computer accesses the traditional DRAM directly during system runtime. In the event of a power failure, the module copies the data from the volatile traditional DRAM to the persistent flash memory, and copies it back when power is restored.
Flash memory is produced using semiconductor linewidths of 30 nm at Samsung (2007) while FeRAMs are produced in linewidths of 350 nm at Fujitsu and 130 nm at Texas Instruments (2007). Flash memory cells can store multiple bits per cell (currently 4 in the highest density NAND flash devices), and the number of bits per flash cell is projected to ...
However, flash is re-written using a large pulse of voltage (about 10 V) that is stored up over time in a charge pump, which is both power-hungry and time-consuming. In addition, the current pulse physically degrades the flash cells, which means flash can only be written to some finite number of times before it must be replaced.