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The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications. The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device.
Photodiodes can be further categorized into: a. PIN Photodiodes: These photodiodes have an additional intrinsic (I) region between the P and N regions, which extends the depletion region and improves the device's performance. b. Schottky Photodiodes: In Schottky photodiodes, a metal-semiconductor junction is used instead of a PN junction.
Design of a PSD using a PIN diode. The technical term PSD was first used in a 1957 publication by J.T. Wallmark for lateral photoelectric effect used for local measurements. On a laminar semiconductor, a so-called PIN diode is exposed to a tiny spot of light. This exposure causes a change in local resistance and thus electron flow in four ...
The combination of LED and photodiode is also used in many sensor systems to characterize different types of products based on their optical absorbance. Photodiodes are often used for accurate measurement of light intensity in science and industry. They generally have a more linear response than photoconductors.
The new photodetector structure invented at NEC was given the name "pinned photodiode" (PPD) by B.C. Burkey at Kodak in 1984. In 1987, the PPD began to be incorporated into most CCD sensors, becoming a fixture in consumer electronic video cameras and then digital still cameras. Since then, the PPD has been used in nearly all CCD sensors and ...
At the receiver end, direct detection (DD) is used to recover the modulated signal. The modulated optical signal is detected by a photodetector (most commonly PIN or APD photodiode), which converts the optical power variations into corresponding electrical current or voltage variations. The output of the photodetector is then processed and ...
2009 Nobel Prize in Physics laureates George E. Smith and Willard Boyle, 2009, photographed on a Nikon D80, which uses a CCD sensor. The basis for the CCD is the metal–oxide–semiconductor (MOS) structure, [2] with MOS capacitors being the basic building blocks of a CCD, [1] [3] and a depleted MOS structure used as the photodetector in early CCD devices.
The first pinned photodiode (PPD) and the Buried Photodiode (BP) both have a shallow P+ implant in N type diffusion layer over a P-type substrate layer. PPD is always BP. PPD does not have the image lag. But BP may have the serious image lag problem. PPD is also not to be confused with the PIN photodiode.[21].