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The purpose of overclocking is to increase the operating speed of a given component. [3] Normally, on modern systems, the target of overclocking is increasing the performance of a major chip or subsystem, such as the main processor or graphics controller, but other components, such as system memory or system buses (generally on the motherboard), are commonly involved.
Low-Power Double Data Rate (LPDDR), also known as LPDDR SDRAM, is a type of synchronous dynamic random-access memory (SDRAM) that consumes less power than other random access memory designs and is thus targeted for mobile computing devices such as laptop computers and smartphones. Older variants are also known as Mobile DDR, and abbreviated as ...
DDR4 RAM operates at a voltage of 1.2 V and supports frequencies between 800 and 1600 MHz (DDR4-1600 through DDR4-3200). Compared to DDR3, which operates at 1.5 V with frequencies from 400 to 1067 MHz (DDR3-800 through DDR3-2133), DDR4 offers better performance and energy efficiency. DDR4 speeds are advertised as double the base clock rate due ...
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
It is for this reason that DDR3-2666 CL9 has a smaller absolute CAS latency than DDR3-2000 CL7 memory. Both for DDR3 and DDR4, the four timings described earlier are not the only relevant timings and give a very short overview of the performance of memory. The full memory timings of a memory module are stored inside of a module's SPD chip.
Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random-access memory (DRAM), the most widely used type of computer memory, and in fact is the defining characteristic of this class of memory. [2]
Normally, there is a performance penalty for using registered memory. Each read or write is buffered for one cycle between the memory bus and the DRAM, so the registered RAM can be thought of as running one clock cycle behind the equivalent unregistered DRAM.
DDR should not be confused with dual channel, in which each memory channel accesses two RAM modules simultaneously. The two technologies are independent of each other and many motherboards use both, by using DDR memory in a dual channel configuration. An alternative to double or quad pumping is to make the link self-clocking.
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