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The Schottky effect or field enhanced thermionic emission is a phenomenon in condensed matter physics named after Walter H. Schottky. In electron emission devices, especially electron guns , the thermionic electron emitter will be biased negative relative to its surroundings.
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by Φ B (see figure).
Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]
In this regime, the combined effects of field-enhanced thermionic and field emission can be modeled by the Murphy-Good equation for thermo-field (T-F) emission. [35] At even higher fields, FN tunneling becomes the dominant electron emission mechanism, and the emitter operates in the so-called "cold field electron emission (CFE)" regime.
The work function W for a given surface is defined by the difference [1] =, where −e is the charge of an electron, ϕ is the electrostatic potential in the vacuum nearby the surface, and E F is the Fermi level (electrochemical potential of electrons) inside the material.
The depletion capacitance leading to Mott–Schottky plot is situated in the high frequency arc, as the depletion capacitance is a dielectric capacitance. On the other hand, the low frequency feature corresponds to the chemical capacitance of the surface states. The surface state charging produces a plateau as indicated in Fig. 1d.
The equation is also known as the "three-halves-power law" or the Child–Langmuir law. Child originally derived this equation for the case of atomic ions, which have much smaller ratios of their charge to their mass. Irving Langmuir published the application to electron currents in 1913, and extended it to the case of cylindrical cathodes and ...
Shown is the graphical definition of the Schottky barrier height, Φ B, for an n-type semiconductor as the difference between the interfacial conduction band edge E C and Fermi level E F. Whether a given metal-semiconductor junction is an ohmic contact or a Schottky barrier depends on the Schottky barrier height, Φ B, of the junction.