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The rapid fall of resistivity when carriers are injected shows their high mobility, here of the order of 5000 cm 2 /Vs. n-Si/SiO 2 substrate, T=1K. [2] Graphene exhibits high electron mobility at room temperature, with values reported in excess of 15 000 cm 2 ⋅V −1 ⋅s −1. [2] Hole and electron mobilities are nearly identical. [73]