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Similarly, when a metal is deposited onto a semiconductor (by thermal evaporation, for example), the wavefunction of an electron in the semiconductor must match that of an electron in the metal at the interface. Since the Fermi levels of the two materials must match at the interface, there exists gap states that decay deeper into the semiconductor.
The common anion rule guesses that, since the valence band is related to anionic states, materials with the same anions should have very small valence band offsets. [citation needed] Tersoff [5] proposed the presence of a dipole layer due to induced gap states, by analogy to the metal-induced gap states in a metal–semiconductor junction.
The nature of these metal-induced gap states and their occupation by electrons tends to pin the center of the band gap to the Fermi level, an effect known as Fermi level pinning. Thus the heights of the Schottky barriers in metal–semiconductor contacts often show little dependence on the value of the semiconductor or metal work functions, in ...
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For binuclear reductive elimination, the oxidation state of each metal decreases by one, while the d-electron count of each metal increases by one. This type of reactivity is generally seen with first row metals, which prefer a one-unit change in oxidation state, but has been observed in both second and third row metals.
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This is very similar to a true 'gap', which is an energy range that contains no allowed states. Such gaps open up, for example, when electrons interact with the lattice. The pseudogap phenomenon is observed in a region of the phase diagram generic to cuprate high-temperature superconductors, existing in underdoped specimens at temperatures ...
The compound can be converted back to a LS state by irradiation with a photon of different energy. Irradiation of d-d transitions of the LS metal complex or MLCT absorption bands leads to population of HS states. [14] A good example to illustrate the LIESST effect is the complex [Fe(1-propyltetrazole) 6](BF4) 2. The sample was irradiated with ...