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  2. Metal-induced gap states - Wikipedia

    en.wikipedia.org/wiki/Metal-induced_gap_states

    In solid-state physics, metal-induced gap states are electron states that exist near the surface of a semiconductor due to the presence of a metal on the surface. They have energies that fall within the semiconductor's bandgap thus are forbidden in the bulk of the semiconductor.

  3. Schottky barrier - Wikipedia

    en.wikipedia.org/wiki/Schottky_barrier

    The nature of these metal-induced gap states and their occupation by electrons tends to pin the center of the band gap to the Fermi level, an effect known as Fermi level pinning. Thus the heights of the Schottky barriers in metal–semiconductor contacts often show little dependence on the value of the semiconductor or metal work functions, in ...

  4. Anderson's rule - Wikipedia

    en.wikipedia.org/wiki/Anderson's_rule

    The common anion rule guesses that, since the valence band is related to anionic states, materials with the same anions should have very small valence band offsets. [citation needed] Tersoff [5] proposed the presence of a dipole layer due to induced gap states, by analogy to the metal-induced gap states in a metal–semiconductor junction.

  5. Metal–semiconductor junction - Wikipedia

    en.wikipedia.org/wiki/Metal–semiconductor_junction

    Picture showing Fermi level pinning effect from metal-induced gap states: The bands in the silicon already start out bent due to surface states. They are bent again just before contact (to match work functions). Upon contact however, the band bending changes completely, in a way that depends on the chemistry of the Ag-Si bonding. [4]

  6. Band bending - Wikipedia

    en.wikipedia.org/wiki/Band_bending

    The unpaired electrons in the dangling bonds of the surface atoms interact with each other to form an electronic state with a narrow energy band, located somewhere within the band gap of the bulk material. For simplicity, the surface state band is assumed to be half-filled with its Fermi level located at the mid-gap energy of the bulk.

  7. Heterojunction - Wikipedia

    en.wikipedia.org/wiki/Heterojunction

    This model includes a dipole layer at the interface between the two semiconductors which arises from electron tunneling from the conduction band of one material into the gap of the other (analogous to metal-induced gap states). This model agrees well with systems where both materials are closely lattice matched [11] such as GaAs/AlGaAs.

  8. Fermi level - Wikipedia

    en.wikipedia.org/wiki/Fermi_level

    The Fermi level does not necessarily correspond to an actual energy level (in an insulator the Fermi level lies in the band gap), nor does it require the existence of a band structure. Nonetheless, the Fermi level is a precisely defined thermodynamic quantity, and differences in Fermi level can be measured simply with a voltmeter.

  9. Pseudogap - Wikipedia

    en.wikipedia.org/wiki/Pseudogap

    In the modern context pseudogap is a term from the field of high-temperature superconductivity which refers to an energy range (normally near the Fermi level) which has very few states associated with it. This is very similar to a true 'gap', which is an energy range that contains no allowed states.

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    related to: metal induced gap states definition biology chemistry textbook 7th level