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In solid-state physics, metal-induced gap states are electron states that exist near the surface of a semiconductor due to the presence of a metal on the surface. They have energies that fall within the semiconductor's bandgap thus are forbidden in the bulk of the semiconductor.
The nature of these metal-induced gap states and their occupation by electrons tends to pin the center of the band gap to the Fermi level, an effect known as Fermi level pinning. Thus the heights of the Schottky barriers in metal–semiconductor contacts often show little dependence on the value of the semiconductor or metal work functions, in ...
Shown is the graphical definition of the Schottky barrier height, Φ B, for an n-type semiconductor as the difference between the interfacial conduction band edge E C and Fermi level E F. Whether a given metal-semiconductor junction is an ohmic contact or a Schottky barrier depends on the Schottky barrier height, Φ B, of the junction.
This model includes a dipole layer at the interface between the two semiconductors which arises from electron tunneling from the conduction band of one material into the gap of the other (analogous to metal-induced gap states). This model agrees well with systems where both materials are closely lattice matched [11] such as GaAs/AlGaAs.
Reductive elimination is an elementary step in organometallic chemistry in which the oxidation state of the metal center decreases while forming a new covalent bond between two ligands. It is the microscopic reverse of oxidative addition , and is often the product-forming step in many catalytic processes.
A pseudogap can be seen with several different experimental methods. One of the first observations was in NMR measurements of YBa 2 Cu 3 O 6+x by H. Alloul et al. [7] and by specific heat measurements by Loram et al. [8] The pseudogap is also apparent in ARPES (Angle Resolved Photoemission Spectroscopy) and STM (Scanning tunneling microscope) data, which can measure the density of states of ...
An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I–V) curve as with Ohm's law.Low-resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds.
In chemistry, pi backbonding or π backbonding is a π-bonding interaction between a filled (or half filled) orbital of a transition metal atom and a vacant orbital on an adjacent ion or molecule. [1] [2] In this type of interaction, electrons from the metal are used to bond to the ligand, which dissipates excess negative charge and
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