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The circuit is treated as a completely linear network of ideal diodes. Every time a diode switches from on to off or vice versa, the configuration of the linear network changes. Adding more detail to the approximation of equations increases the accuracy of the simulation, but also increases its running time.
Ideal diode with a series voltage source and resistor. The I-V characteristic of the final circuit looks like this: I-V characteristic of an ideal diode with a series voltage source and resistor. The real diode now can be replaced with the combined ideal diode, voltage source and resistor and the circuit then is modelled using just linear elements.
Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3] He calls it "a theoretical rectification formula giving the maximum rectification", with a footnote referencing a paper by Carl Wagner , Physikalische Zeitschrift 32 , pp ...
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
Zener diodes have a low breakdown voltage. A standard value for breakdown voltage is for instance 5.6 V. This means that the voltage at the cathode cannot be more than about 5.6 V higher than the voltage at the anode (though there is a slight rise with current), because the diode breaks down, and therefore conducts, if the voltage gets any higher.
This is the case for all linear elements, but also, for example, an ideal diode, which in circuit theory terms is a non-linear resistor, has a constitutive relation of the form = (). Both independent voltage and independent current sources can be considered non-linear resistors under this definition.
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage. [1]
The load line diagram at right is for a resistive load in a common emitter circuit. The load line shows how the collector load resistor (R L) constrains the circuit voltage and current. The diagram also plots the transistor's collector current I C versus collector voltage V CE for different values of base current I base.