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This relative alignment of the energy bands at such semiconductor heterojunctions is called the Band offset. The band offsets can be determined by both intrinsic properties, that is, determined by properties of the bulk materials, as well as non-intrinsic properties, namely, specific properties of the interface.
Consider a heterojunction between semiconductor 1 and semiconductor 2. Suppose the conduction band of semiconductor 2 is closer to the vacuum level than that of semiconductor 1. The conduction band offset would then be given by the difference in electron affinity (energy from upper conducting band to vacuum level) of the two semiconductors:
This formula involves the same approximations mentioned above. Therefore, if a plot of h ν {\displaystyle h\nu } versus α 2 {\displaystyle \alpha ^{2}} forms a straight line, it can normally be inferred that there is a direct band gap, measurable by extrapolating the straight line to the α = 0 {\displaystyle \alpha =0} axis.
The 60:40 rule is a heuristic for the specific case of junctions between the semiconductor GaAs and the alloy semiconductor Al x Ga 1−x As. As the x in the Al x Ga 1− x As side is varied from 0 to 1, the ratio Δ E C / Δ E V {\displaystyle \Delta E_{C}/\Delta E_{V}} tends to maintain the value 60/40.
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states.
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As a result no band bending occurs. If the semiconductor is doped, the Fermi level of the bulk is shifted with respect to that of the undoped semiconductor by the introduction of dopant eigenstates within the band gap. It is shifted up for n-doped semiconductors (closer to the conduction band) and down in case of p-doping (nearing the valence ...
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