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This relative alignment of the energy bands at such semiconductor heterojunctions is called the Band offset. The band offsets can be determined by both intrinsic properties, that is, determined by properties of the bulk materials, as well as non-intrinsic properties, namely, specific properties of the interface.
For semiconductor alloys it may be necessary to use Vegard's law to calculate these values. Once the relative positions of the conduction and valence bands for both semiconductors are known, Anderson's rule allows the calculation of the band offsets of both the valence band ( Δ E v {\displaystyle \Delta E_{\rm {v}}} ) and the conduction band ...
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
This formula involves the same approximations mentioned above. Therefore, if a plot of h ν {\displaystyle h\nu } versus α 2 {\displaystyle \alpha ^{2}} forms a straight line, it can normally be inferred that there is a direct band gap, measurable by extrapolating the straight line to the α = 0 {\displaystyle \alpha =0} axis.
Electronic band structure of a semiconductor material. Like other solids, semiconductor materials have an electronic band structure determined by the crystal properties of the material. Energy distribution among electrons is described by the Fermi level and the temperature of the electrons.
As a result no band bending occurs. If the semiconductor is doped, the Fermi level of the bulk is shifted with respect to that of the undoped semiconductor by the introduction of dopant eigenstates within the band gap. It is shifted up for n-doped semiconductors (closer to the conduction band) and down in case of p-doping (nearing the valence ...
The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.)
The Urbach Energy, or Urbach Edge, is a parameter typically denoted , with dimensions of energy, used to quantify energetic disorder in the band edges of a semiconductor. It is evaluated by fitting the absorption coefficient as a function of energy to an exponential function.