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The integrated circuit aluminum layer was removed via chemical etching to reveal this detail. A metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid-1970s ...
They constrain the gates to the housing structures, allow them to move and connect the gates to the operating plant. The steel gates consist of a male element (3 metres (9.8 ft) high and weighing 10 tonnes (9.8 long tons; 11 short tons)) connected to the gate, a female element (1.5 metres (4 ft 11 in) high and weighing 25 tonnes (25 long tons ...
Then, the two 22-metre high and 210-metre long steel gates were built. After this, 237-metre long steel trusses were welded to the gates. The arms weigh 6,800 tonnes each. [3] The main purpose of the arms is transmitting the immense forces, exerted on the gates while closed, to one single joint at the rear of each gate.
Barbed wire. Barbed wire, also known as barb wire, is a type of steel fencing wire constructed with sharp edges or points arranged at intervals along the strands. Its primary use is the construction of inexpensive fences, and it is also used as a security measure atop walls surrounding property. As a wire obstacle, it is a major feature of the ...
Portcullis at Desmond Castle, Adare, County Limerick, Ireland The inner portcullis of the Torre dell'Elefante in Cagliari, Sardinia, Italy A portcullis (from Old French porte coleice 'sliding gate') [1] is a heavy, vertically closing gate typically found in medieval fortifications, consisting of a latticed grille made of wood and/or metal, which slides down grooves inset within each jamb of ...
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
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