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Silicon crystallizes in a diamond cubic crystal structure by forming sp 3 hybrid orbitals. [48] A silicon atom has fourteen electrons. In the ground state, they are arranged in the electron configuration [Ne]3s 2 3p 2. Of these, four are valence electrons, occupying the 3s orbital and two of the 3p orbitals.
The Pauli exclusion principle limits the number of electrons in a single orbital to two, and the bands are filled beginning with the lowest energy. At the actual diamond crystal cell size denoted by a, two bands are formed, separated by a 5.5 eV band gap. Animation of band formation and how electrons fill them in a metal and an insulator
Here [Ne] refers to the core electrons which are the same as for the element neon (Ne), the last noble gas before phosphorus in the periodic table. The valence electrons (here 3s 2 3p 3) are written explicitly for all atoms. Electron configurations of elements beyond hassium (element 108) have never been measured; predictions are used below.
Silicon and germanium are used here effectively because they have 4 valence electrons in their outermost shell, which gives them the ability to gain or lose electrons equally at the same time. Binary compounds , particularly between elements in groups 13 and 15, such as gallium arsenide , groups 12 and 16, groups 14 and 16, and between ...
Silicon-34 is a radioactive isotope with a half-life of 2.8 seconds. [1] In addition to the usual N = 20 closed shell, the nucleus also shows a strong Z = 14 shell closure, making it behave like a doubly magic spherical nucleus, except that it is also located two protons above an island of inversion . [ 15 ]
Lithium has two electrons in the 1s-subshell and one in the (higher-energy) 2s-subshell, so its configuration is written 1s 2 2s 1 (pronounced "one-s-two, two-s-one"). Phosphorus (atomic number 15) is as follows: 1s 2 2s 2 2p 6 3s 2 3p 3. For atoms with many electrons, this notation can become lengthy and so an abbreviated notation is used.
In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000 cm 2 /(V⋅s). Hole mobilities are generally lower and range from around 100 cm 2 /(V⋅s) in gallium arsenide, to 450 in silicon, and 2,000 in germanium.
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...