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As a material transitions from the amorphous state to the fully crystalline state, the broad maximum sharpens up and other sharp peaks start to appear in the n(λ) and k(λ) spectra. This is demonstrated for the case of amorphous silicon progressing to poly-silicon and further progressing to crystalline silicon.
Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs.. Used as semiconductor material for a-Si solar cells, or thin-film silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic.
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process.
Polycrystalline silicon (p-Si) is a pure and conductive form of the element composed of many crystallites, or grains of highly ordered crystal lattice.In 1984, studies showed that amorphous silicon (a-Si) is an excellent precursor for forming p-Si films with stable structures and low surface roughness. [2]
Crystalline silicon or (c-Si) is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells .
Yet, if the high-density amorphous ice is warmed up to 165 K not at low pressures but keeping the 1.6 GPa compression, and then cooled back to 77 K, then another amorphous ice is produced, which has even higher density of 1.25 g/cm 3 at 1 bar. All those amorphous forms have very different vibrational lattice spectra and intermolecular distances.
A reported silicon phosphide is Si 12 P 5 (no practical applications), [89] [90] formed by annealing an amorphous Si-P alloy. The arsenic–silicon phase diagram measured at 40 Bar has two phases: SiAs and SiAs 2. [91] The antimony–silicon system comprises a single eutectic close to the melting point of Sb. [92] The bismuth system is a ...
Because it is naturally abundant and well understood, amorphous or polycrystalline silicon were (and still are) used as the semiconductor layer. However, because of the low mobility of amorphous silicon [ 2 ] and the large device-to-device variations found in polycrystalline silicon, [ 3 ] [ 4 ] [ 5 ] other materials have been studied for use ...
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