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  2. Metal gate - Wikipedia

    en.wikipedia.org/wiki/Metal_gate

    A metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid-1970s, the "M" for metal has been replaced by polysilicon, but the name remained.

  3. Portcullis - Wikipedia

    en.wikipedia.org/wiki/Portcullis

    A portcullis (from Old French porte coleice 'sliding gate') is a heavy, vertically closing gate typically found in medieval fortifications. [1] A portcullis gate is constructed of a latticed grille, made of wood or metal or both, which slides down grooves inset within each jamb of the gateway.

  4. Yett - Wikipedia

    en.wikipedia.org/wiki/Yett

    Yett hanging in the main entrance of Blackness Castle, Scotland, showing attached bolts and pierced construction.Wrought in 1693. [1]A yett (from the Old English and Scots language word for "gate") [2] is a gate or grille of latticed wrought iron bars used for defensive purposes in castles and tower houses. [3]

  5. Depletion and enhancement modes - Wikipedia

    en.wikipedia.org/wiki/Depletion_and_enhancement...

    Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage.

  6. MOSFET - Wikipedia

    en.wikipedia.org/wiki/MOSFET

    The disadvantages of metal gates are overcome by a few techniques: [54] The threshold voltage is tuned by including a thin "work function metal" layer between the high-κ dielectric and the main metal. This layer is thin enough that the total work function of the gate is influenced by both the main metal and thin metal work functions (either ...

  7. Gate oxide - Wikipedia

    en.wikipedia.org/wiki/Gate_oxide

    Gate oxide at NPNP transistor made by Frosch and Derrick, 1957 [1]. The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on.

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