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Several variants of the original TO-5 package have the same cap dimensions but differ in the number and length of the leads (wires). Somewhat incorrectly, TO-5 and TO-39 are often used in manufacturer's literature as synonyms for any package with the cap dimensions of TO-5, regardless of the number of leads, or even for any package with the diameter of TO-5, regardless of the cap height and ...
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
For example, a metric 2520 component is 2.5 mm by 2.0 mm which corresponds roughly to 0.10 inches by 0.08 inches (hence, imperial size is 1008). Exceptions occur for imperial in the two smallest rectangular passive sizes. The metric codes still represent the dimensions in mm, even though the imperial size codes are no longer aligned.
It is a 0.6-ampere, 60-volt, 400-milliwatt transistor. Its transition frequency f T (where the current gain drops to one) under specified test conditions is 200 Megahertz. At low frequencies, the current gain (beta) is at least 100. The 2N2907 is used in a variety of analog amplification and switching applications.
The 2N7000 is housed in a TO92 package, with lead 1 connected as the source, lead 2 as the gate, and lead 3 as the drain. The BS170 has the source and drain leads interchanged. The 2N7002 variant is packaged in a TO-236 surface-mount package. The 2N7000 is an N-channel, enhancement-mode MOSFET used for low-power switching applications. [1]
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
The TO-220 is a style of electronic package used for high-powered, through-hole components with 0.1 inches (2.54 mm) pin spacing. The "TO" designation stands for "transistor outline". [2] TO-220 packages have three leads. Similar packages with two, four, five or seven leads are also manufactured.
The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] Its numbering follows the JEDEC standard. [2] It is a transistor type of enduring popularity. [3] [4] [5]