Search results
Results from the WOW.Com Content Network
Aluminium nitride (Al N) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) [ 5 ] and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
Aluminium oxynitride (marketed under the name ALON by Surmet Corporation [3]) is a transparent ceramic composed of aluminium, oxygen and nitrogen. Aluminium oxynitride is optically transparent (≥80% for 2 mm thickness) in the near-ultraviolet , visible, and mid-wave- infrared regions of the electromagnetic spectrum.
Four pnictides, aluminium nitride (AlN), aluminium phosphide (AlP), aluminium arsenide (AlAs), and aluminium antimonide (AlSb), are known. They are all III-V semiconductors isoelectronic to silicon and germanium, all of which but AlN have the zinc blende structure. All four can be made by high-temperature (and possibly high-pressure) direct ...
Titanium nitride (TiN; sometimes known as tinite) is an extremely hard ceramic material, often used as a physical vapor deposition (PVD) coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties.
SiAlON gear (right) prepared from a billet (left) by forging at 1200 °C within 2 seconds. SiAlONs are produced by first combining a mixture of raw materials including silicon nitride, alumina, aluminium nitride, silica and the oxide of a rare-earth element such as yttrium.
Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronics, [9] [10] [11] high-power and high-frequency ...
Hexagonal boron nitride, which adopts a layered structure, is a useful high-temperature lubricant akin to molybdenum disulfide. Nitride compounds often have large band gaps, thus nitrides are usually insulators or wide-bandgap semiconductors; examples include boron nitride and silicon nitride.
Aluminium nitrate cannot be synthesized by the reaction of aluminium with concentrated nitric acid, as the aluminium forms a passivation layer. Aluminium nitrate may instead be prepared by the reaction of nitric acid with aluminium(III) chloride. Nitrosyl chloride is produced as a by-product; it bubbles out of the solution as a gas.