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The Bridgman method is a popular way of producing certain semiconductor crystals such as gallium arsenide, for which the Czochralski method is more difficult. The process can reliably produce single-crystal ingots, but does not necessarily result in uniform properties through the crystal.
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits , monolithic microwave integrated circuits , infrared light-emitting diodes , laser diodes , solar cells and optical windows.
Organogallium compounds can be synthesized by transmetallation, for example the reaction of gallium metal with dimethylmercury: 2Ga + 3Me 2 Hg → 2Me 3 Ga + 3 Hg. or via organolithium compounds or Grignards: GaCl 3 + 3MeMgBr → Me 3 Ga + 3MgBrCl. The electron-deficient nature of gallium can be removed by complex formation, for example
Print/export Download as PDF; Printable version; In other projects ... Gallium arsenide (GaAs), semiconductor; Games as a service, revenue model for video games;
Learn about the properties, structures and applications of different arsenides.
Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (Ga As (1-x) Sb x), is a ternary III-V semiconductor compound; x indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of gallium arsenide (GaAs) and gallium antimonide (GaSb).
Gallium trichloride is a common starting reagent for the formation of organogallium compounds, such as in carbogallation reactions. [15] Gallium trichloride reacts with lithium cyclopentadienide in diethyl ether to form the trigonal planar gallium cyclopentadienyl complex GaCp 3. Gallium(I) forms complexes with arene ligands such as ...
Arsenic is used as the group 15 element in the III-V semiconductors gallium arsenide, indium arsenide, and aluminium arsenide. [10] The valence electron count of GaAs is the same as a pair of Si atoms, but the band structure is completely different which results in distinct bulk properties. [11]
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