Search results
Results from the WOW.Com Content Network
Active negative differential resistance devices (fig. 4): Circuits can be designed in which a positive voltage applied to the terminals will cause a proportional "negative" current; a current out of the positive terminal, the opposite of an ordinary resistor, over a limited range, [2] [26] [44] [45] [46] Unlike in the above devices, the ...
A lambda diode is an electronic circuit that combines a complementary pair of junction gated field effect transistors into a two-terminal device that exhibits an area of differential negative resistance much like a tunnel diode. The term refers to the shape of the V–I curve of the device, which resembles the Greek letter λ (lambda).
There are multiple ways to simulate Chua's diode using such components. One standard design is realized by connecting two negative impedance converters in parallel. A negative impedance converter (NIC) is a simple op amp circuit that has negative resistance. Another implementation uses one negative impedance converter to create the negative ...
A "locally active resistor" is a device that has negative resistance and is active (it can amplify), providing the power to generate the oscillating current. The locally active resistor and nonlinearity are combined in the device N R, which is called "Chua's diode". This device is not sold commercially but is implemented in various ways by ...
A working mechanism of a resonant tunneling diode device and negative differential resistance in output characteristic. There is a negative resistance characteristic after the first current peak, due to a reduction of the first energy level below the source Fermi level with gate bias.
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .
The electronic symbol for a frequency-dependent negative resistor. The symbol is intended to evoke a double capacitor. A frequency-dependent negative resistor (FDNR) is a circuit element that exhibits a purely real negative resistance −1/(ω 2 kC) that decreases in magnitude at a rate of −40 dB per decade.
This meant that it produced very low-power signals. Nevertheless, as one of the few devices known to create microwaves, interest in the device and potential improvements was widespread. The first major improvement was the split-anode magnetron, also known as a negative-resistance magnetron. As the name implies, this design used an anode that ...