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For a completely unknown memory access (AKA Random access), the relevant latency is the time to close any open row, plus the time to open the desired row, followed by the CAS latency to read data from it. Due to spatial locality, however, it is common to access several words in the same row. In this case, the CAS latency alone determines the ...
Note: Memory bandwidth measures the throughput of memory, and is generally limited by the transfer rate, not latency. By interleaving access to SDRAM's multiple internal banks, it is possible to transfer data continuously at the peak transfer rate. It is possible for increased bandwidth to come at a cost in latency.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
While the access latency of DRAM is fundamentally limited by the DRAM array, DRAM has very high potential bandwidth because each internal read is actually a row of many thousands of bits. To make more of this bandwidth available to users, a double data rate interface was developed. This uses the same commands, accepted once per cycle, but reads ...
Reduced Latency DRAM (RLDRAM) is a type of specialty dynamic random-access memory (DRAM) with a SRAM-like interface originally developed by Infineon Technologies.It is a high-bandwidth, semi-commodity, moderately low-latency (relative to contemporaneous SRAMs) memory targeted at embedded applications (such as computer networking equipment) requiring memories that have moderate costs and low ...
Memory latency is the time (the latency) between initiating a request for a byte or word in memory until it is retrieved by a processor. If the data are not in the processor's cache , it takes longer to obtain them, as the processor will have to communicate with the external memory cells.
It can also be used by slaves that can optimise their responses if they know in advance how many data transfers there will be. The typical example here is a DRAM which has a high initial access latency, but sequential accesses after that can be performed with fewer wait states. [1]
Rambus DRAM (RDRAM), and its successors Concurrent Rambus DRAM (CRDRAM) and Direct Rambus DRAM (DRDRAM), are types of synchronous dynamic random-access memory (SDRAM) developed by Rambus from the 1990s through to the early 2000s. The third-generation of Rambus DRAM, DRDRAM was replaced by XDR DRAM. Rambus DRAM was developed for high-bandwidth ...