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  2. Memory rank - Wikipedia

    en.wikipedia.org/wiki/Memory_rank

    A memory rank is a set of DRAM chips connected to the same chip select, which are therefore accessed simultaneously. In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate (the data pins are shared across ranks).

  3. DDR4 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR4_SDRAM

    DDR4 is not compatible with any earlier type of random-access memory (RAM) due to different signaling voltage and physical interface, besides other factors. DDR4 SDRAM was released to the public market in Q2 2014, focusing on ECC memory , [ 6 ] while the non-ECC DDR4 modules became available in Q3 2014, accompanying the launch of Haswell-E ...

  4. DDR SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR_SDRAM

    The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed

  5. Synchronous dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Synchronous_dynamic_random...

    The memory is divided into several equally sized but independent sections called banks, allowing the device to operate on a memory access command in each bank simultaneously and speed up access in an interleaved fashion. This allows SDRAMs to achieve greater concurrency and higher data transfer rates than asynchronous DRAMs could.

  6. Dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Dynamic_random-access_memory

    Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...

  7. Memory timings - Wikipedia

    en.wikipedia.org/wiki/Memory_timings

    It is for this reason that DDR3-2666 CL9 has a smaller absolute CAS latency than DDR3-2000 CL7 memory. Both for DDR3 and DDR4, the four timings described earlier are not the only relevant timings and give a very short overview of the performance of memory. The full memory timings of a memory module are stored inside of a module's SPD chip.

  8. GDDR4 SDRAM - Wikipedia

    en.wikipedia.org/wiki/GDDR4_SDRAM

    GDDR4 SDRAM, an abbreviation for Graphics Double Data Rate 4 Synchronous Dynamic Random-Access Memory, is a type of graphics card memory (SGRAM) specified by the JEDEC Semiconductor Memory Standard. [ 1 ] [ 2 ] It is a rival medium to Rambus's XDR DRAM .

  9. List of interface bit rates - Wikipedia

    en.wikipedia.org/wiki/List_of_interface_bit_rates

    This is a list of interface bit rates, is a measure of information transfer rates, or digital bandwidth capacity, at which digital interfaces in a computer or network can communicate over various kinds of buses and channels. The distinction can be arbitrary between a computer bus, often closer in space, and larger telecommunications networks.