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2. Resistive random-access memory - Wikipedia

   en.wikipedia.org/wiki/Resistive_random-access_memory

   Compared to PRAM, ReRAM operates at a faster timescale (switching time can be less than 10 ns), while compared to MRAM, it has a simpler, smaller cell structure (less than 8F² MIM stack). A vertical 1D1R (one diode, one resistive switching device) integration can be used for crossbar memory structure to reduce the unit cell size to 4F² (F is ...

3. Magnetoresistive RAM - Wikipedia

   en.wikipedia.org/wiki/Magnetoresistive_RAM

   A review article [9] provides the details of materials and challenges associated with MRAM in the perpendicular geometry. The authors describe a new term called "Pentalemma", which represents a conflict in five different requirements such as write current, stability of the bits, readability, read/write speed and the process integration with CMOS.

4. Memristor - Wikipedia

   en.wikipedia.org/wiki/Memristor

   A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.

5. List of screw and bolt types - Wikipedia

   en.wikipedia.org/wiki/List_of_screw_and_bolt_types

   Sheet metal screws make excellent fasteners for attaching metal hardware to wood because the fully threaded shank provides good retention in wood. Twinfast screw A Twinfast screw is a type of screw with two threads (i.e. a twin-start screw ), so that it can be driven twice as fast as a normal (i.e. single-start) screw with the same pitch. [ 4 ]

6. Talk:Magnetoresistive RAM - Wikipedia

   en.wikipedia.org/wiki/Talk:Magnetoresistive_RAM

   7 Just found an article interesting regarding the history of MRAM. 1 comment. 8 MRAM vs DRAM. 2 comments. 9 External magnetic field. 3 comments ...

7. Ferroelectric RAM - Wikipedia

   en.wikipedia.org/wiki/Ferroelectric_RAM

   Data reliability is guaranteed in F-RAM even in a high magnetic field environment compared to MRAM. Cypress Semiconductor's [ 16 ] F-RAM devices are immune to the strong magnetic fields and do not show any failures under the maximum available magnetic field strengths (3,700 Gauss for horizontal insertion and 2,000 Gauss for vertical insertion).

8. Weebit Nano - Wikipedia

   en.wikipedia.org/wiki/Weebit_Nano

   The company's products are targeted at a broad range of NVM markets where persistence, performance, and endurance are all required. ReRAM technology can be integrated in electronic devices like wearables, Internet of Things (IoT) endpoints, smartphones, robotics, autonomous vehicles, and 5G cellular communications, among other products. [1]

9. Non-volatile random-access memory - Wikipedia

   en.wikipedia.org/wiki/Non-volatile_random-access...

   Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...