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p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
Band diagram for p–n junction at equilibrium. The depletion region is shaded. φ B denotes band shift for holes and charges level. See P–n diode. The inner workings of a light emitting diode, showing circuit (top) and band diagram when a bias voltage is applied (bottom).
A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...
The following image shows change in excess carriers being generated (green:electrons and purple:holes) with increasing light intensity (generation rate /cm 3) at the center of an intrinsic semiconductor bar.
The diagram shows a schematic representation of an NPN transistor connected to two voltage sources. (The same description applies to a PNP transistor with reversed directions of current flow and applied voltage.) This applied voltage causes the lower p–n junction to become forward biased, allowing a flow of electrons from the emitter into the ...
Schematic diagram showing the three-way coupling among piezoelectricity, photoexcitation and semiconductor properties. When a p-type semiconductor and a n-type semiconductor form a junction, the holes in the p-type side and the electrons in the n-type side tend to redistribute around the interface area to balance the local electric field ...
The inner workings of an LED, showing circuit (top) and band diagram (bottom) The p–n junction in any direct band gap material emits light when electric current flows through it. This is electroluminescence. Electrons cross from the n-region and recombine with the holes existing in the p-region.
The ideality factor (also called the emissivity factor) is a fitting parameter that describes how closely the diode's behavior matches that predicted by theory, which assumes the p–n junction of the diode is an infinite plane and no recombination occurs within the space-charge region. A perfect match to theory is indicated when n = 1.