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  2. Synthesis of carbon nanotubes - Wikipedia

    en.wikipedia.org/wiki/Synthesis_of_carbon_nanotubes

    The catalytic vapor phase deposition of carbon was reported in 1952 [11] and 1959, [12] but it was not until 1993 [13] that carbon nanotubes were formed by this process. In 2007, researchers at the University of Cincinnati (UC) developed a process to grow aligned carbon nanotube arrays of length 18 mm on a FirstNano ET3000 carbon nanotube ...

  3. Chemical vapor deposition - Wikipedia

    en.wikipedia.org/wiki/Chemical_vapor_deposition

    Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films .

  4. Metalorganic vapour-phase epitaxy - Wikipedia

    en.wikipedia.org/wiki/Metalorganic_vapour-phase...

    In the metal organic chemical vapor deposition (MOCVD) technique, reactant gases are combined at elevated temperatures in the reactor to cause a chemical interaction, resulting in the deposition of materials on the substrate. A reactor is a chamber made of a material that does not react with the chemicals being used.

  5. Plasma-enhanced chemical vapor deposition - Wikipedia

    en.wikipedia.org/wiki/Plasma-enhanced_chemical...

    Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases.

  6. Island growth - Wikipedia

    en.wikipedia.org/wiki/Island_growth

    Download as PDF; Printable version ... Island growth is a physical model of deposited film growth and chemical vapor deposition. [1] ... whereas slow deposition ...

  7. Vapor–liquid–solid method - Wikipedia

    en.wikipedia.org/wiki/Vapor–liquid–solid_method

    Au-Si droplets on the surface of the substrate act to lower the activation energy of normal vapor-solid growth. For example, Si can be deposited by means of a SiCl 4:H 2 gaseous mixture reaction (chemical vapor deposition), only at temperatures above 800 °C, in normal vapor-solid growth. Moreover, below this temperature almost no Si is ...

  8. Physical vapor deposition - Wikipedia

    en.wikipedia.org/wiki/Physical_vapor_deposition

    Evaporative deposition: the material to be deposited is heated to a high vapor pressure by electrical resistance heating in "high" vacuum. [4] [5] Close-space sublimation, the material, and substrate are placed close to one another and radiatively heated. Pulsed laser deposition: a high-power laser ablates material from the target into a vapor.

  9. Molecular-beam epitaxy - Wikipedia

    en.wikipedia.org/wiki/Molecular-beam_epitaxy

    Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...