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The dimeric silicon dioxide, (SiO 2) 2 has been obtained by reacting O 2 with matrix isolated dimeric silicon monoxide, (Si 2 O 2). In dimeric silicon dioxide there are two oxygen atoms bridging between the silicon atoms with an Si–O–Si angle of 94° and bond length of 164.6 pm and the terminal Si–O bond length is 150.2 pm.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Silicon oxynitride is a ceramic material with the chemical formula SiO x N y.While in amorphous forms its composition can continuously vary between SiO 2 and Si 3 N 4 (silicon nitride), the only known intermediate crystalline phase is Si 2 N 2 O. [2] It is found in nature as the rare mineral sinoite in some meteorites and can be synthesized in the laboratory.
Silicon dioxide; From a chemical formula: This is a redirect from a chemical/molecular formula to its systematic (technical) or trivial name.
In 1955, Carl Frosch and Lincoln Derick at Bell Labs accidentally discovered that silicon dioxide (SiO 2) could be grown on silicon. [40] [41] By 1957 Frosch and Derick published their work on the first manufactured SiO 2 semiconductor oxide transistor: the first planar transistors, in which drain and source were adjacent at the same surface. [42]
The field of solid-state ionics was first developed in Europe, starting with the work of Michael Faraday on solid electrolytes Ag 2 S and PbF 2 in 1834. Fundamental contributions were later made by Walther Nernst, who derived the Nernst equation and detected ionic conduction in heterovalently doped zirconia, which he applied in his Nernst lamp.
2) is formed by burning silicon in gaseous sulfur at 100 °C; sublimation of the resulting compound in nitrogen results in white, flexible long fibers reminiscent of asbestos with a structure similar to W-silica. This melts at 1090 °C and sublimes at 1250 °C; at high temperature and pressure this transforms to a crystal structure analogous to ...
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.