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For a device that makes use of the secondary breakdown effect see Avalanche transistor. Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction.
Intel Pentium M Banias – 2003-03-12; Intel Pentium 4 Northwood- 2002-01-07; Intel Celeron Northwood-128 – 2002-09-18; Intel Xeon Prestonia and Gallatin – 2002-02-25; VIA C3 – 2001; AMD Athlon XP Thoroughbred, Thorton, and Barton; AMD Athlon MP Thoroughbred – 2002-08-27; AMD Athlon XP-M Thoroughbred, Barton, and Dublin; AMD Duron ...
English physicist J. J. Thomson invented waveguides. 1894: Italian inventor Guglielmo Marconi begins developing the first radio wave based wireless telegraphy communication system [6] [7] 1895: Indian physicist Jagadish Chandra Bose conducts experiments in extremely high frequency millimetre waves using a semiconductor junction to detect radio ...
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Computer history museum. 2012 A compendium of articles and other information on the development of integrated circuits, including the development of oxide masking, photolithography, the advent of silicon, the integrated circuit and the planar process. The Planar Process "The history of the integrated circuit".