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  2. Resistive random-access memory - Wikipedia

    en.wikipedia.org/wiki/Resistive_random-access_memory

    Stan Williams of HP Labs also argued that ReRAM was a memristor. [21] However, others challenged this terminology and the applicability of memristor theory to any physically realizable device is open to question. [22] [23] [24] Whether redox-based resistively switching elements (ReRAM) are covered by the current memristor theory is disputed. [25]

  3. Memristor - Wikipedia

    en.wikipedia.org/wiki/Memristor

    A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.

  4. Phase-change memory - Wikipedia

    en.wikipedia.org/wiki/Phase-change_memory

    Often the isolation capabilities are inferior to the use of transistors if the on/off ratio for the selector is not sufficient, limiting the ability to operate very large arrays in this architecture. Chalcogenide-based threshold switches have been demonstrated as a viable selector for high-density PCM arrays [22]

  5. LibreOffice Calc - Wikipedia

    en.wikipedia.org/wiki/LibreOffice_Calc

    LibreOffice Calc is the spreadsheet component of the LibreOffice software package. [6] [7]After forking from OpenOffice.org in 2010, LibreOffice Calc underwent a massive re-work of external reference handling to fix many defects in formula calculations involving external references, and to boost data caching performance, especially when referencing large data ranges.

  6. Current–voltage characteristic - Wikipedia

    en.wikipedia.org/wiki/Current–voltage...

    A current–voltage characteristic or I–V curve (current–voltage curve) is a relationship, typically represented as a chart or graph, between the electric current through a circuit, device, or material, and the corresponding voltage, or potential difference, across it.

  7. Magnetoresistive RAM - Wikipedia

    en.wikipedia.org/wiki/Magnetoresistive_RAM

    The main determinant of a memory system's cost is the density of the components used to make it up. Smaller components, and fewer of them, mean that more "cells" can be packed onto a single chip, which in turn means more can be produced at once from a single silicon wafer.

  8. Data compression ratio - Wikipedia

    en.wikipedia.org/wiki/Data_compression_ratio

    Data compression ratio, also known as compression power, is a measurement of the relative reduction in size of data representation produced by a data compression algorithm. It is typically expressed as the division of uncompressed size by compressed size.

  9. Memory cell (computing) - Wikipedia

    en.wikipedia.org/wiki/Memory_cell_(computing)

    The capacitance of the bit line will determine the needed size of the storage capacitor (4). It is a trade-off. If the storage capacitor is too small, the voltage of the bit line would take too much time to raise or not even rise above the threshold needed by the amplifiers at the end of the bit line.

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