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  2. CMOS - Wikipedia

    en.wikipedia.org/wiki/CMOS

    CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]

  3. Front end of line - Wikipedia

    en.wikipedia.org/wiki/Front_end_of_line

    Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]

  4. Semiconductor device fabrication - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device...

    Feature size is determined by the width of the smallest lines that can be patterned in a semiconductor fabrication process, this measurement is known as the linewidth. [12] [13] Patterning often refers to photolithography which allows a device design or pattern to be defined on the device during fabrication. [14]

  5. Integrated circuit design - Wikipedia

    en.wikipedia.org/wiki/Integrated_circuit_design

    A Process design kit (PDK) may be provided by the foundry and it may include the standard cell library as well as the specifications of the cells, and tools to verify the fabless company's design against the design rules specified by the foundry as well as simulate it using the foundry's cells. PDKs may be provided under non-disclosure agreements.

  6. Back end of line - Wikipedia

    en.wikipedia.org/wiki/Back_end_of_line

    The BEOL process deposits metalization layers on the silicion to interconnect the individual devices generated during FEOL (bottom). CMOS fabrication process. Back end of the line or back end of line (BEOL) is a process in semiconductor device fabrication that consists of depositing metal interconnect layers onto a wafer already patterned with devices.

  7. Shallow trench isolation - Wikipedia

    en.wikipedia.org/wiki/Shallow_trench_isolation

    The shallow trench isolation fabrication process of modern integrated circuits in cross-sections. Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components.

  8. List of semiconductor fabrication plants - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    This is a list of semiconductor fabrication plants, factories where integrated circuits (ICs), also known as microchips, are manufactured.They are either operated by Integrated Device Manufacturers (IDMs) that design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by pure play foundries that manufacture designs from fabless companies and do ...

  9. Multi-project wafer service - Wikipedia

    en.wikipedia.org/wiki/Multi-project_wafer_service

    Multi-project chip (MPC), and multi-project wafer (MPW) semiconductor manufacturing arrangements allow customers to share tooling (like mask) and microelectronics wafer fabrication cost between several designs or projects. MPC consisting of five CMOS IC designs and few test N- and PMOS transistors for manufacturing acceptance