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One version of Chua's circuit, where the nonlinear Chua's diode is synthesized by an op amp negative impedance converter (OPA1) and a diode–resistor network (D1, D2, both R2) An autonomous circuit made from standard components (resistors, capacitors, inductors) must satisfy three criteria before it can display chaotic behaviour. [3] It must ...
To implement the current injection technique, current injection circuit was developed with results indicating that the injection of an additional current during its switching transient can reduce the reverse recovery charge of a given power diode and thyristor, and also reduce the tail current of insulated gate bipolar transistors.
A Josephson diode (JD) is a special type of Josephson junction (JJ), which conducts (super)current in one direction better that in the opposite direction. In other words it has asymmetric current-voltage characteristic. Since Josephson diode is a superconducting device, the asymmetry of the supercurrent transport
Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...
The characteristic curve (curved line), representing the current I through the diode for any given voltage across the diode V D, is an exponential curve. The load line (diagonal line) , representing the relationship between current and voltage due to Kirchhoff's voltage law applied to the resistor and voltage source, is
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes).This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.
Plan-view EBIC showing defects in a diode Cross-sectional EBIC of a p-n junction. By using the signal from the picoammeter as the imaging signal, an EBIC image is formed on the screen of the SEM or STEM. When a semiconductor device is imaged in cross-section, the depletion region will show bright EBIC contrast.