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For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT), the safe operating area (SOA) is defined as the voltage and current conditions over which the device can be expected to operate without self-damage. [1] Illustration of safe operating area of a bipolar power transistor.
For several years, the Semiconductor Industry Association (SIA) gave this responsibility of coordination to the United States, which led to the creation of an American style roadmap, the National Technology Roadmap for Semiconductors (NTRS). [5] The first semiconductor roadmap, published by the SIA in 1993.
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations
Substrate mapping (or wafer mapping) is a process in which the performance of semiconductor devices on a substrate is represented by a map showing the performance as a colour-coded grid. The map is a convenient representation of the variation in performance across the substrate, since the distribution of those variations may be a clue as to ...
Semiconductor fabrication techniques continued to improve throughout. The Micralign, which had "created the modern IC industry", was obsolete by the early 1980s. They were replaced by the new steppers , which used high magnifications and extremely powerful light sources to allow a large mask to be copied onto the wafer at ever-smaller sizes.
High-temperature operating life (HTOL) is a reliability test applied to integrated circuits (ICs) to determine their intrinsic reliability. This test stresses the IC at an elevated temperature, high voltage and dynamic operation for a predefined period of time.
Cover of the comic book "THE SHMOO" The plot takes its name from the Shmoo, a fictional species created by Al Capp in the cartoon Li'l Abner.These small, blob-like creatures have shapes similar to the "working" volumes that would be enclosed by shmoo plots drawn against three independent variables (such as voltage, temperature, and response speed).
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.