Search results
Results from the WOW.Com Content Network
The tunnel diode showed great promise as an oscillator and high-frequency threshold (trigger) device since it operated at frequencies far greater than the tetrode could: well into the microwave bands. Applications of tunnel diodes included local oscillators for UHF television tuners, trigger circuits in oscilloscopes, high-speed counter ...
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions.
Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]
To understand how band structure changes relative to the Fermi level in real space, a band structure plot is often first simplified in the form of a band diagram. In a band diagram the vertical axis is energy while the horizontal axis represents real space. Horizontal lines represent energy levels, while blocks represent energy bands. When the ...
The current from the bias battery V b biases the diode into the center of its curve (black), where it has a negative differential resistance of r (red). The operating point and output voltage of the circuit v o is at the intersection of the tunnel diode curve and the resistor load line R (blue) .Since R < r , if the two values are close in ...
Band diagrams of the SBFET operations. From left to right: negative applied voltage bend the band diagram enabling a hole tunneling current (p-type); without any voltage applied only thermionic emission is allowed for carriers (off-state); a positive gate voltage enables electrons to tunnel due to the downwards band bending (n-type).
This diode has a resonant voltage for which a current favors a particular voltage, achieved by placing two thin layers with a high energy conductance band near each other. This creates a quantum potential well that has a discrete lowest energy level. When this energy level is higher than that of the electrons, no tunnelling occurs and the diode ...
Electrons from the valence band of the p-type region tunnel into the conduction band of the intrinsic region and current can flow across the device. [5] As the gate bias is reduced, the bands become misaligned and current can no longer flow. Energy band diagram for a basic lateral TFET structure.