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The integrated circuit aluminum layer was removed via chemical etching to reveal this detail. A metal gate , in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal.
Aluminum: 85.9 - 89.5 Zinc: 7.2 - 8.2 Magnesium 2 - 2.9 Copper 1.2 - 1.9 Silicon ≤ 0.15 Titanium ≤ 0.10 Iron ≤ 0.20 Chromium 0.10 - 0.22 Manganese ≤ 0.20
The material has an elongation (stretch before ultimate failure) of 9–10%. As is the case for all 7075 aluminum alloys, 7075-0 is highly corrosion-resistant combined with generally acceptable strength profile.
Aluminium (or aluminum in North American English) is a chemical element; it has symbol Al and atomic number 13. Aluminium has a density lower than that of other common metals, about one-third that of steel. It has a great affinity towards oxygen, forming a protective layer of oxide on the surface when exposed to air.
In this situation, there is a distinction between "optical band gap" and "electronic band gap" (or "transport gap"). The optical bandgap is the threshold for photons to be absorbed, while the transport gap is the threshold for creating an electron–hole pair that is not bound together. The optical bandgap is at lower energy than the transport gap.
Aluminum-silicon phase diagram. Aluminum forms a eutectic with silicon, which is at 577 °C, with a Si content of 12.5% [7] or 12.6%. [8] Up to 1.65% Si can be dissolved in aluminum at this temperature. However, the solubility decreases rapidly with temperature. At 500 °C it is still 0.8% Si, at 400 °C 0.3% Si and at 250 °C only 0.05% Si.
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