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  2. Electron mobility - Wikipedia

    en.wikipedia.org/wiki/Electron_mobility

    Then the electron mobility μ is defined as =. Electron mobility is almost always specified in units of cm 2 /(V⋅s). This is different from the SI unit of mobility, m 2 /(V⋅s). They are related by 1 m 2 /(V⋅s) = 10 4 cm 2 /(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same ...

  3. Electrical mobility - Wikipedia

    en.wikipedia.org/wiki/Electrical_mobility

    Electrical mobility is the ability of charged particles (such as electrons or protons) to move through a medium in response to an electric field that is pulling them. The separation of ions according to their mobility in gas phase is called ion mobility spectrometry, in liquid phase it is called electrophoresis.

  4. Drift velocity - Wikipedia

    en.wikipedia.org/wiki/Drift_velocity

    The formula for evaluating the drift velocity of charge carriers in a material of constant cross-sectional area is given by: [1] =, where u is the drift velocity of electrons, j is the current density flowing through the material, n is the charge-carrier number density, and q is the charge on the charge-carrier.

  5. Atom by Atom, Scientists Built a Wonder Material That May ...

    www.aol.com/atom-atom-scientists-built-wonder...

    To improve this electron mobility, measured in the oh-so-memorable unit of centimeters squared per volt-second (cm^2/V-s), scientists at MIT leveraged a process known as molecular beam epitaxy to ...

  6. High-electron-mobility transistor - Wikipedia

    en.wikipedia.org/wiki/High-electron-mobility...

    The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.

  7. Hall effect - Wikipedia

    en.wikipedia.org/wiki/Hall_effect

    Here n is the electron concentration, p the hole concentration, μ e the electron mobility, μ h the hole mobility and e the elementary charge. For large applied fields the simpler expression analogous to that for a single carrier type holds.

  8. Charge carrier density - Wikipedia

    en.wikipedia.org/wiki/Charge_carrier_density

    In this case, the carrier density (in this context, also called the free electron density) can be estimated by: [5] n = N A Z ρ m m a {\displaystyle n={\frac {N_{\text{A}}Z\rho _{m}}{m_{a}}}} Where N A {\displaystyle N_{\text{A}}} is the Avogadro constant , Z is the number of valence electrons , ρ m {\displaystyle \rho _{m}} is the density of ...

  9. Drift current - Wikipedia

    en.wikipedia.org/wiki/Drift_current

    The drift velocity, and resulting current, is characterized by the mobility; for details, see electron mobility (for solids) or electrical mobility (for a more general discussion). See drift–diffusion equation for the way that the drift current, diffusion current, and carrier generation and recombination are combined into a single equation.