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  2. Robert H. Dennard - Wikipedia

    en.wikipedia.org/wiki/Robert_H._Dennard

    The insight was the catalyst for DRAM — Dennard’s most important innovation. [3] In 1966 he invented the one transistor memory cell consisting of a transistor and a capacitor for which a patent was issued in 1968. [4] It became the basis for today's dynamic random-access memory (DRAM) and almost all other memory types such as SRAM and FLASH ...

  3. Dennard scaling - Wikipedia

    en.wikipedia.org/wiki/Dennard_scaling

    In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.

  4. Dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Dynamic_random-access_memory

    In 1966, Dr. Robert Dennard invented modern DRAM architecture in which there's a single MOS transistor per capacitor, [11] at the IBM Thomas J. Watson Research Center, while he was working on MOS memory and was trying to create an alternative to SRAM which required six MOS transistors for each bit of data. While examining the characteristics of ...

  5. 1 μm process - Wikipedia

    en.wikipedia.org/wiki/1_μm_process

    The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974. [ 3 ] Products featuring 1.0 μm manufacturing process

  6. List of semiconductor scale examples - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    Hussein I. Hanafi, Robert H. Dennard, Yuan Taur, Nadim F. Haddad IBM T.J. Watson Research Center [43] December 1987: 250 nm? Naoki Kasai, Nobuhiro Endo, Hiroshi Kitajima NEC [44] February 1988: 400 nm 10 nm: M. Inoue, H. Kotani, T. Yamada, Hiroyuki Yamauchi Matsushita [37] [45] December 1990: 100 nm?

  7. Scientists build silicon transistor just one atom thick - AOL

    www.aol.com/news/2015-02-05-scientists-build...

    Step aside, graphene, "silicene" is the trendy new nano-material in town that could one day supercharge future tech. Scientists have created the world's first transistor out of the silicon-based ...

  8. Semiconductor memory - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_memory

    In 1967, Dennard filed a patent under IBM for a single-transistor DRAM memory cell, based on MOS technology. [23] This led to the first commercial DRAM IC chip, the Intel 1103 , in October 1970. [ 24 ] [ 25 ] [ 26 ] Synchronous dynamic random-access memory (SDRAM) later debuted with the Samsung KM48SL2000 chip in 1992.

  9. 3 new reasons to be concerned about Magnificent 7 stocks

    www.aol.com/finance/3-reasons-dump-magnificent-7...

    For one, the Street is unlikely to stop scrutinizing how much is being spent on capex for AI in 2025 and 2026. Meta, Microsoft, Amazon, ...