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The insight was the catalyst for DRAM — Dennard’s most important innovation. [3] In 1966 he invented the one transistor memory cell consisting of a transistor and a capacitor for which a patent was issued in 1968. [4] It became the basis for today's dynamic random-access memory (DRAM) and almost all other memory types such as SRAM and FLASH ...
In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.
In 1966, Dr. Robert Dennard invented modern DRAM architecture in which there's a single MOS transistor per capacitor, [11] at the IBM Thomas J. Watson Research Center, while he was working on MOS memory and was trying to create an alternative to SRAM which required six MOS transistors for each bit of data. While examining the characteristics of ...
The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974. [ 3 ] Products featuring 1.0 μm manufacturing process
[6] [7] In 1966, this factory produced the first mass manufactured semiconductor DRAM, based on Robert H. Dennard's patents developed for IBM in 1966. Such chips were later used in the company's System/370 Model 145 mainframe (1970), IBM's first computer built entirely from integrated circuits, abandoning the core memory of old.
In 1967, Dennard filed a patent for a single-transistor DRAM memory cell, based on MOS technology. [21] The first commercial bipolar 64-bit SRAM was released by Intel in 1969 with the 3101 Schottky TTL. One year later, it released the first DRAM integrated circuit chip, the Intel 1103, based on MOS technology.
Step aside, graphene, "silicene" is the trendy new nano-material in town that could one day supercharge future tech. Scientists have created the world's first transistor out of the silicon-based ...
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations