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The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]
Organic field-effect transistor (OFET), in which the semiconductor is an organic compound; Ballistic transistor (disambiguation) FETs used to sense the environment Ion-sensitive field-effect transistor (ISFET), to measure ion concentrations in solution, Electrolyte–oxide–semiconductor field-effect transistor (EOSFET), neurochip,
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations in solution. [1] When the target analyte concentration changes, the current through the transistor will change accordingly. [2] Here, the analyte solution separates the source and gate electrodes. [3]
The first working transistor was a point-contact transistor invented by John Bardeen, Walter Houser Brattain, and William Shockley at Bell Labs in 1947. Shockley had earlier theorized a field-effect amplifier made from germanium and silicon, but he failed to build such a working device, before eventually using germanium to invent the point ...
Cross section of a GaAs/AlGaAs/InGaAs pHEMT Band diagram of GaAs/AlGaAs heterojunction-based HEMT, at equilibrium.. A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of ...
The first practical transistor was the point-contact transistor, invented by the engineers Walter Houser Brattain and John Bardeen while working for William Shockley at Bell Labs in 1947. This was a breakthrough that laid the foundations for modern technology. [2] Shockley's research team also invented the bipolar junction transistor in 1952.
He was a researcher at Bell Telephone Laboratories in Murray Hill, New Jersey, and he invented MOSFET (metal–oxide–semiconductor field-effect transistor), which is the basic element in most of today's electronic equipment, with Mohamed Atalla in 1959. [4] They fabricated both PMOS and NMOS devices with a 20 μm process. [5]
It is a special type of MOSFET (metal–oxide–semiconductor field-effect transistor), [1] and shares the same basic structure, but with the metal gate replaced by an ion-sensitive membrane, electrolyte solution and reference electrode. [2] Invented in 1970, the ISFET was the first biosensor FET (BioFET). The schematic view of an ISFET.