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The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations in solution. [1] When the target analyte concentration changes, the current through the transistor will change accordingly. [2] Here, the analyte solution separates the source and gate electrodes. [3]
The first working transistor was a point-contact transistor invented by John Bardeen, Walter Houser Brattain, and William Shockley at Bell Labs in 1947. Shockley had earlier theorized a field-effect amplifier made from germanium and silicon, but he failed to build such a working device, before eventually using germanium to invent the point ...
Cross section of a GaAs/AlGaAs/InGaAs pHEMT Band diagram of GaAs/AlGaAs heterojunction-based HEMT, at equilibrium.. A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of ...
It is a special type of MOSFET (metal–oxide–semiconductor field-effect transistor), [1] and shares the same basic structure, but with the metal gate replaced by an ion-sensitive membrane, electrolyte solution and reference electrode. [2] Invented in 1970, the ISFET was the first biosensor FET (BioFET). The schematic view of an ISFET.
The concept of a field-effect transistor was first theorized by Julius Edgar Lilienfeld in 1925. [102] The first practical transistor was the point-contact transistor , invented by the engineers Walter Houser Brattain and John Bardeen while working for William Shockley at Bell Labs in 1947.
The Early effect, named after its discoverer James M. Early , is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage.