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The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]
Organic field-effect transistor (OFET), in which the semiconductor is an organic compound; Ballistic transistor (disambiguation) FETs used to sense the environment Ion-sensitive field-effect transistor (ISFET), to measure ion concentrations in solution, Electrolyte–oxide–semiconductor field-effect transistor (EOSFET), neurochip,
The first working transistor was a point-contact transistor invented by John Bardeen, Walter Houser Brattain, and William Shockley at Bell Labs in 1947. Shockley had earlier theorized a field-effect amplifier made from germanium and silicon, but he failed to build such a working device, before eventually using germanium to invent the point ...
Another type of transistor, the field-effect transistor (FET), operates on the principle that semiconductor conductivity can be increased or decreased by the presence of an electric field. An electric field can increase the number of free electrons and holes in a semiconductor, thereby changing its conductivity.
John Bardeen (/ b ɑːr ˈ d iː n /; May 23, 1908 – January 30, 1991) [2] was an American electrical engineer and theoretical physicist.He is the only person to be awarded the Nobel Prize in Physics twice: first in 1956 with William Shockley and Walter Brattain for the invention of the transistor; and again in 1972 with Leon N. Cooper and John Robert Schrieffer for a fundamental theory of ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
In 1956, the three men were jointly awarded the Nobel Prize in Physics by King Gustaf VI Adolf of Sweden "for research on semiconductors and the discovery of the transistor effect." [8] Bardeen and Brattain were included for the discovery of the point-contact transistor; Shockley for the development of the junction transistor. Walter Brattain ...
The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. [62] [63] The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors.