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Due to the lack of spatial inversion symmetry, odd-layer MoS2 is a promising material for valleytronics because both the CBM and VBM have two energy-degenerate valleys at the corners of the first Brillouin zone, providing an exciting opportunity to store the information of 0s and 1s at different discrete values of the crystal momentum.
Molybdenite is a mineral of molybdenum disulfide, Mo S 2.Similar in appearance and feel to graphite, molybdenite has a lubricating effect that is a consequence of its layered structure.
A carbon nanotube field-effect transistor (CNTFET) is a field-effect transistor that utilizes a single carbon nanotube (CNT) or an array of carbon nanotubes as the channel material, instead of bulk silicon, as in the traditional MOSFET structure.
In semiconductor device fabrication, channel-stopper or channel-stop is an area in semiconductor devices produced by implantation or diffusion of ions, by growing or patterning the silicon oxide, or other isolation methods in semiconductor material with the primary function to limit the spread of the channel area or to prevent the formation of parasitic channels (inversion layers).
The threshold voltage (and consequently the drain to source on-current) is modified by the work function difference between the gate material and channel material. Because polysilicon is a semiconductor, its work function can be modulated by adjusting the type and level of doping.
A popular group of molecules, that can work as the semiconducting channel material in a molecular transistor, is the oligopolyphenylenevinylenes (OPVs) that works by the Coulomb blockade mechanism when placed between the source and drain electrode in an appropriate way. [4] Fullerenes work by the same mechanism and have also been commonly used.
Shown to the right is a diagram of band-bending interfaces between two different metals (high and low work functions) and two different semiconductors (n-type and p-type). Volker Heine was one of the first to estimate the length of the tail end of metal electron states extending into the semiconductor's energy gap. He calculated the variation ...
In fact, empirically, it is found that neither of the above extremes is quite correct. The choice of metal does have some effect, and there appears to be a weak correlation between the metal work function and the barrier height, however the influence of the work function is only a fraction of that predicted by the Schottky-Mott rule. [6]: 143