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In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.
Semiconductor characterization techniques are used to characterize a semiconductor material or device (p–n junction, Schottky diode, solar cell, etc.).Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.
This greater energy affects the mobility of charge carriers and as a consequence affects how they travel through a semiconductor device. [3] Hot electrons can tunnel out of the semiconductor material, instead of recombining with a hole or being conducted through the material to a collector. Consequent effects include increased leakage current ...
Absorption is the active process in photodiodes, solar cells and other semiconductor photodetectors, while stimulated emission is the principle of operation in laser diodes. Besides light excitation, carriers in semiconductors can also be generated by an external electric field, for example in light-emitting diodes and transistors.
Electrical mobility is the ability of charged particles (such as electrons or protons) to move through a medium in response to an electric field that is pulling them. The separation of ions according to their mobility in gas phase is called ion mobility spectrometry, in liquid phase it is called electrophoresis.
Carrier mobility strongly depends on the concentration of localized states in a non-linear fashion. [2] In the case of nearest-neighbour hopping , which is the limit of low concentrations, the following expression can be fitted to the experimental results: [ 3 ]
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
A semiconductor is a material that has a resistivity between a conductor and insulator. Modern day electronics run on semiconductors, and the industry had an estimated US$530 billion market in 2021. [35] Its electronic properties can be greatly altered through intentionally introducing impurities in a process referred to as doping.