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Unlike other semiconductor diodes, the Shockley diode has more than one p–n junction. The construction includes four sections of semiconductors placed alternately between the anode and cathode in the pattern of PNPN. Though it has multiple junctions, it is termed a diode for being a two-terminal device.
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
The 391 San Antonio Road, Mountain View, site of the Shockley Semiconductor Laboratory, in Dec. 2017. The new project being completed here includes a display of sculptures of packaged semiconductors, including a 2N696 transistor, a Shockley 4-layer diode, and another diode, standing above the sidewalk (seen at the left here).
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
A Schottky diode is a single metal–semiconductor junction, used for its rectifying properties. Schottky diodes are often the most suitable kind of diode when a low forward voltage drop is desired, such as in a high-efficiency DC power supply. Also, because of their majority-carrier conduction mechanism, Schottky diodes can achieve greater ...
For simplicity, diodes may sometimes be assumed to have no voltage drop or resistance when forward-biased and infinite resistance when reverse-biased. But real diodes are better approximated by the Shockley diode equation, which has an more complicated exponential current–voltage relationship called the diode law.
It was invented by William Shockley at Bell Labs on June 23, 1948 [2] (patent filed June 26, 1948), six months after the first bipolar point-contact transistor. The first germanium prototypes were made in 1949. Bell Labs announced Shockley’s grown-junction transistor on July 4, 1951.
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