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Memory scrubbing consists of reading from each computer memory location, correcting bit errors (if any) with an error-correcting code , and writing the corrected data back to the same location. [ 1 ] Due to the high integration density of modern computer memory chips , the individual memory cell structures became small enough to be vulnerable ...
Flash memory is a type of EEPROM designed for high speed and high density, at the expense of large erase blocks (typically 512 bytes or larger) and limited number of write cycles (often 10,000). There is no clear boundary dividing the two, but the term "EEPROM" is generally used to describe non-volatile memory with small erase blocks (as small ...
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile .
Memory corruption occurs in a computer program when the contents of a memory location are modified due to programmatic behavior that exceeds the intention of the original programmer or program/language constructs; this is termed as violation of memory safety. The most likely causes of memory corruption are programming errors (software bugs ...
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Its endurance may be from as little as 100 erase cycles for an on-chip flash memory, [32] to a more typical 10,000 or 100,000 erase cycles, up to 1,000,000 erase cycles. [33] NOR-based flash was the basis of early flash-based removable media; CompactFlash was originally based on it, though later cards moved to less expensive NAND flash.
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Device's built-in DRAM cache The built-in DRAM cache of the storage device (usually SSD) may used to decrease the write amplification Variable Inverse (good) TRIM command for SATA or UNMAP for SCSI These commands must be sent by the operating system (OS) which tells the storage device which pages contain invalid data.