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A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .
Consequently, tunnel diode logic circuits required a means to reset the diode after each logical operation. However, a simple tunnel diode gate offered little isolation between inputs and outputs and had low fan in and fan out. More complex gates, with additional tunnel diodes and bias power supplies, overcame some of these limitations. [7]
A minimum PVCR of about 3 is needed for typical circuit applications. Low current density Si/SiGe RITDs are suitable for low-power memory applications, and high current density tunnel diodes are needed for high-speed digital/mixed-signal applications. Si/SiGe RITDs have been engineered to have room temperature PVCRs up to 4.0. [23]
The tunnel diode circuit (see diagram) is an example. [82] The tunnel diode TD has voltage controlled negative differential resistance. [54] The battery adds a constant voltage (bias) across the diode so it operates in its negative resistance range, and provides power to amplify the signal.
The current from the bias battery V b biases the diode into the center of its curve (black), where it has a negative differential resistance of r (red). The operating point and output voltage of the circuit v o is at the intersection of the tunnel diode curve and the resistor load line R (blue) .Since R < r , if the two values are close in ...
Microwave diode reflection amplifier using a circulator. A reflection amplifier is a type of microwave amplifier circuit utilizing negative differential resistance diodes such as tunnel diodes and Gunn diodes. Negative differential resistance diodes can amplify signals, and often perform better at microwave frequencies than two-port devices.
In semiconductor devices, a backward diode (also called back diode [2]) is a variation on a Zener diode or tunnel diode having a better conduction for small reverse biases (for example –0.1 to –0.6 V) than for forward bias voltages. The reverse current in such a diode is by tunneling, which is also known as the tunnel effect. [3] [4] [5]
Often, an equivalent circuit is sought that simplifies calculation, and more broadly, that is a simplest form of a more complex circuit in order to aid analysis. [1] In its most common form, an equivalent circuit is made up of linear, passive elements. However, more complex equivalent circuits are used that approximate the nonlinear behavior of ...
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