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Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
For one, each application of the current physically degrades the cell, such that the cell will eventually be unwritable. Write cycles on the order of 10 5 to 10 6 are typical, limiting flash applications to roles where constant writing is not common. The current also requires an external circuit to generate, using a system known as a charge ...
Both Wide I/O 2 and HBM utilize a very wide parallel memory interface—up to 512 bits for Wide I/O 2 compared to 64 bits for DDR4—although they operate at lower frequencies than DDR4. Wide I/O 2 is designed for high-performance, compact devices, often integrated into processors or system on a chip (SoC) packages.
Instead, it holds the current output valid (thus extending the data output time) even as the DRAM begins decoding a new column address, until either a new column's data is selected by another CAS falling edge, or the output is switched off by the rising edge of RAS. (Or, less commonly, a change in CS, OE, or WE.)
Crossbar filed patents relating to the development, commercialization and manufacturing of RRAM technology. [ 5 ] In August 2013, Crossbar emerged from stealth mode and announced the development of a memory array at a commercial semiconductor device fabrication facility.
Medtronic (NYSE: MDT), a giant in medical devices, is another solid dividend payer with a recent yield of 3.2%. That payout has grown at an average annual rate of about 5% over the past five years ...
The memory cell is the fundamental building block of memory. It can be implemented using different technologies, such as bipolar, MOS, and other semiconductor devices.It can also be built from magnetic material such as ferrite cores or magnetic bubbles. [1]